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2sk3150(l), 2sk3150(s) silicon n channel mos fet high speed power switching ade-208-750b (z) 3rd. edition mar. 2001 features low on-resistance r ds =45m w typ. high speed switching 4v gate drive device can be driven from 5v source outline 1. gate 2. drain 3. source 4. drain 1 2 3 4 1 2 3 4 ldpak g d s
2sk3150(l),2sk3150(s) 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v drain current i d 20 a drain peak current i d(pulse) note1 80 a body-drain diode reverse drain current i dr 20 a avalanche current i ap note3 20 a avalanche energy e ar note3 40 mj channel dissipation pch note2 50 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c note: 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 3 50 w
2sk3150(l),2sk3150(s) 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 100 v i d = 10ma, v gs = 0 gate to source breakdown voltage v (br)gss 20v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16v, v ds = 0 zero gate voltege drain current i dss 10 m av ds = 100 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.5 v i d = 1ma, v ds = 10v static drain to source on state r ds(on) ?560m w i d = 10a, v gs = 10v note4 resistance r ds(on) ?585m w i d = 10a, v gs = 4v note4 forward transfer admittance |y fs | 8.5 14 s i d = 10a, v ds = 10v note4 input capacitance ciss 900 pf v ds = 10v output capacitance coss 400 pf v gs = 0 reverse transfer capacitance crss 210 pf f = 1mhz turn-on delay time t d(on) 15 ns i d = 10a, v gs = 10v rise time t r 120 ns r l = 3 w turn-off delay time t d(off) 200 ns fall time t f 150 ns body?rain diode forward voltage v df 0.9 v i f = 20a, v gs = 0 body?rain diode reverse recovery time t rr 90 ns i f = 20a, v gs = 0 dif/ dt =50a/ m s note: 4. pulse test
2sk3150(l),2sk3150(s) 4 main characteristics 80 60 40 20 0 50 100 150 200 100 3 10 1 0.1 0.05 1 2 10 20 100 20 16 12 8 4 0 12345 0 2 46810 ta = 25 ? tc = 75? 25? ?5? channel dissipation pch (w) case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics operation in this area is limited by r ds(on) v = 10 v pulse test ds 100 ? 1 ms pw =10 ms (1shot) dc operation (tc = 25?) 10 ? 20 16 12 8 4 3.5 v 3 v v =2.5 v gs 10 v pulse test 6 v 4 v 0.3 500 30 550 200 0.5 500
2sk3150(l),2sk3150(s) 5 1 10 100 2 50 500 20 50 10 250 200 150 100 50 ?0 0 40 80 120 160 0 0.1 0.3 1 3 10 30 100 50 20 5 10 1 2 0.5 20 5 2.5 2.0 1.5 1.0 0.5 0 48 12 16 20 i = 15 a d 5 a 10 a 200 100 v = 4 v gs 10 v v = 4 v gs 10 v 25 ? tc = ?5 ? 75 ? gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on ) drain to source saturation voltage drain current i (a) d drain to source on state resistance r ( ) m w ds(on) static drain to source on state resistance vs. drain current case temperature t c (?) ds(on) r ( ) static drain to source on state resistance m w static drain to source on state resistance vs. temperature drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current pulse test pulse test v = 10 v pulse test ds pulse test 15 a 5,10 a 15 a 5,10 a
2sk3150(l),2sk3150(s) 6 0.1 0.3 13 10 30 50 01020304050 2000 10000 1000 100 200 500 200 160 120 80 40 0 20 16 12 8 4 20 40 60 80 100 0 500 50 5 10 2 1 20 200 1000 20 100 10 0.1 0.2 1 2 10 20 di / dt = 50 a / s v = 0, ta = 25 c gs 10 20 50 v = 0 f = 1 mhz gs ciss coss crss i = 15 a d v gs v ds v = 100 v 50 v 25 v dd t f r t d(on) t d(off) t reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics drain current i (a) d switching time t (ns) switching characteristics v = 10 v, v = 30 v pw = 5 s, duty < 1 % gs dd v = 100 v 50 v 25 v dd 50 500 0.5 50 5000 100 200
2sk3150(l),2sk3150(s) 7 20 16 12 8 4 0 0.2 0.4 0.6 0.8 1.0 v = 0, ? v gs 10 v 5 v 50 40 30 20 10 25 50 75 100 125 150 0 d. u. t rg i monitor ap v monitor ds v dd 50 w vin 15 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage pulse test channel temperature tch (?) repetive avalanche energy e (mj) ar maximun avalanche energy vs. channel temperature derating avalanche waveform avalanche test circuit i = 20 a v = 50 v duty < 0.1 % rg > 50 ap dd w
2sk3150(l),2sk3150(s) 8 vin monitor d.u.t. vin 10 v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f switching time test circuit waveform 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) g dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 2.5 ?/w, tc = 25 ? q g q q tc = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse normalized transient thermal impedance vs. pulse width
2sk3150(l),2sk3150(s) 9 package dimensions hitachi code jedec eiaj mass (reference value) ldpak (l) 1.4 g 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ?0.1 1.2 0.2 4.44 0.2 1.3 0.15 2.59 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ?0.5 (1.4) 1.27 0.2 as of january, 2001 unit: mm
2sk3150(l),2sk3150(s) 10 hitachi code jedec eiaj mass (reference value) ldpak (s)-(1) 1.3 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 3.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
2sk3150(l),2sk3150(s) 11 hitachi code jedec eiaj mass (reference value) ldpak (s)-(2) 1.35 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.2 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 5.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
2sk3150(l),2sk3150(s) 12 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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